SSG0410

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

01-Jun-2010 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G



Gate



Source

Drain



DESCRIPTION

The SSG0410 provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface

mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES



Simple Drive Requirement



Low Gate Charge



Fast Switching Characteristic

MARKING

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Continuous Drain Current

3

3.8

A

3.0

A

Pulsed Drain Current

1

8

A

Total Power Dissipation

2.5

W

Linear Derating Factor

0.02

W / °C

Operating Junction & Storage Temperature Range

-55 ~ 150

°C

THERMAL RESISTANCE RATINGS

Thermal Resistance Junction-ambient

50

°C / W

SOP-8

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

0410SC





1

S

S

S

G

D

D

D

D



= Date Code

2

3

4

5

6

7

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