SSG0410 datasheet(2/4 Pages) SECOS

2 / 4 page

SSG0410

N-Ch Enhancement Mode Power MOSFET

3.8 A, 100 V, RDS(ON) 158 m

Elektronische Bauelemente

01-Jun-2010 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J = 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

Drain-Source Breakdown Voltage

BVDSS

100

VGS=0V, ID =1mA

Gate Threshold Voltage

VGS(th)

1.0

3.0

VDS=10V, ID =1mA

Forward Transconductance

gfs

VDS=10V, ID =2.5A

Gate-Source Leakage Current

IGSS

±100

VGS=±20V

Drain-Source Leakage

Current(TJ=25°C)

IDSS

μA

VDS=100V, VGS=0V

Drain-Source Leakage

Current(TJ=55°C)

μA

VDS=100V, VGS=0V

Static Drain-Source On-Resistance

RDS(ON)

158

mΩ

VGS=10V, ID=2.7A

175

VGS=6V, ID=2.5A

Total Gate Charge

11.2

VDS=80V, ID =3.5A, VGS=5V

Gate-Source Chagre

Qgs

4.4

Gate-Drain (“Miller”) Change

Qgd

Turn-on Delay Time

Td(ON)

VDS=30V, VGS=10V

I D=1A, RL=30Ω, RG=6Ω

Rise Time

9.4

Turn-off Delay Time

Td(OFF)

26.8

Fall Time

2.6

Input Capacitance

CISS

975

1670

VDS=25V

VGS=0V

f=1MHz

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SOURCE-DRAIN DIODE

Forward On Voltage

VSD

1.2

IS=3.8A, VGS=0V

Notes：

Pulse width limited by Max. junction temperature.

Pulse width

300 μs, duty cycle

≦≦ ％

Surface mounted on 1 in

2 copper pad of FR4 board；125 °C / W when mounted on Min. copper pad.

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