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STT3463P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3463P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  STT3463P -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 08-Apr-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Miniature TSOP-6 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications. APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. PACKAGE INFORMATION Package MPQ Leader Size TSOP-6 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA= 25°C ID -3.0 A TA= 70°C -2.4 Pulsed Drain Current 2 IDM -15 A Continuous Source Current (Diode Conduction) 1 IS -1.7 A Power Dissipation 1 TA= 25°C PD 2.0 W TA= 70°C 1.3 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RJA 62.5 °C / W 110 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. D G DD D S REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F0.30 0.50 TSOP-6 B L F H C J D G K A E 1 23 4 5 6 |
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