STT3463P datasheet(2/2 Pages) SECOS

2 / 2 page

STT3463P

-3 A, -60 V, RDS(ON) 155 m

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

08-Apr-2011 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate-Threshold Voltage

VGS(th)

-1

VDS= VGS, ID= -250μA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS= -48V, VGS=0

-10

VDS= -48V, VGS=0, TJ= 55°C

On-State Drain Current

ID(on)

-20

VDS = -5V, VGS= -10V

Drain-Source On-Resistance

RDS(ON)

155

mΩ

VGS= -10V, ID= -3A

230

VGS= -4.5V, ID= -2.5A

Forward Transconductance

gfs

VDS= -15V, ID= -3.0A

Diode Forward Voltage

VSD

-1.2

IS= -2.5A, VGS=0

Dynamic

Total Gate Charge

VDS= -30V,

VGS= -4.5V,

ID= -3A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-on Delay Time

Td(on)

VDD= -30V,

VGEN= -10V,

RL=30Ω,

ID= -1A,

RG=6Ω

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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