SSG4520H datasheet(2/6 Pages) SECOS

2 / 6 page

Elektronische Bauelemente

SSG4520H

N-Ch: 6.6 A, 20 V, RDS(ON) 47 m

P-Ch: -5.2 A, -20 V, RDS(ON) 79 m

N & P-Ch Enhancement Mode Power MOSFET

27-Dec-2010 Rev. B

Page 2 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol Ch

Min.

Typ.

Max.

Unit

Teat Conditions

Static

0.4

VDS= VGS, ID= 250μA

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID= -250μA

±100

VDS= 0V, VGS= 12V

Gate-Body Leakage

IGSS

±100

VDS= 0V, VGS= -12V

VDS= 24V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS= -24V, VGS= 0V

VDS= 5V, VGS= 4.5V

On-State Drain Current

ID(on)

-20

VDS= -5V, VGS= -4.5V

VGS= 4.5V, ID= 6.6A

VGS= 2.5V, ID= 6.2A

VGS= -4.5V, ID= -5.2A

Drain-Source On-Resistance

RDS(ON)

110

mΩ

VGS= -2.5V, ID= -4.4A

VDS= 15V, ID= 6.6A

Forward Transconductance

gfs

VDS= -15V, ID= -5.2A

Dynamic

6.3

Total Gate Charge

0.9

Gate-Source Charge

Qgs

2.2

1.9

Gate-Drain Charge

Qgd

1.7

N-Channel

ID= 6.6A, VDS= 15V, VGS= 4.5V

P-Channel

ID= -5.2A, VDS= -15V, VGS= -4.5V

Switching

7.4

Turn-On Delay Time

Td(on)

7.6

Rise Time

6.8

22.2

Turn-Off Delay Time

Td(off)

33.6

3.6

Fall Time

23.2

N-Channel

VDD= 15V, VGS= 4.5V

ID= 1A, RGEN= 6Ω

P-Channel

VDD= -15V, VGS= -4.5V

ID= -1A, RGEN= 6Ω

Notes:

Pulse test：PW ≦ 300

μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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