ZXGD3006E6 datasheet(2/8 Pages) DIODES

2 / 8 page

ZXGD3006E6

Document Number DS35229 Rev. 1 – 2

2 of 8

www.diodes.com

June 2011

A Product Line of

Diodes Incorporated

ZXGD3006E6

Typical Application Circuit

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Supply voltage, with respect to VEE

VCC

Input voltage, with respect to VEE

VIN

Output difference voltage (Source – Sink)

ΔV(source-sink)

±7.5

Peak output current

IPK

±10

Input current

IIN

±100

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation (Notes 4 & 5)

Linear derating factor

1.1

8.8

mW/

°C

Thermal Resistance, Junction to Ambient (Notes 4 & 5)

RθJA

113

°C/W

Thermal Resistance, Junction to Lead (Note 6)

RθJL

105

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

4. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (VCC) and pin 3 (VEE) connected separately to each half.

5. For device with two active die running at equal power.

6. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (VEE).

VCC

+ supply

ZXGD3006

VCC

SOURCE

SINK

RSOURCE

RSINK

VEE

IGBT

(or SiC MOSFET)

VEE

- supply

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