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TSM4N60CPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM4N60CPROG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 11 page  TSM4N60 600V N-Channel Power MOSFET 2/11 Version: D10 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance Junction to Case TO-220 / TO-251 / TO-252 RӨJC 1.78 oC/W ITO-220 5 Thermal Resistance Junction to Ambient TO-220 / ITO-220 RӨJA 62.5 oC/W TO-251 / TO-252 100 Notes: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Ta=25 oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA On Characteristics Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2 2.5 Dynamic Characteristics Total Gate Charge VDS = 480V, ID = 4A, VGS = 10V Qg -- 15 20 nC Gate-Source Charge Qgs -- 2.8 -- Gate-Drain Charge Qgd -- 6.2 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 545 710 pF Output Capacitance Coss -- 60 80 Reverse Transfer Capacitance Crss -- 8 11 Turn-On Delay Time VGS = 10V, ID = 4A, VDD = 300V, RG = 25 td(on) -- 10 30 nS Turn-On Rise Time tr -- 35 80 Turn-Off Delay Time td(off) -- 45 100 Turn-Off Fall Time tf -- 40 90 Source-Drain Diode Ratings and Characteristics Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET IS -- -- 4 A Pulse Source Current ISM -- -- 16 Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time IS = 4A, VGS = 0V dlF/dt=100A/us trr -- 300 -- nS Reverse Recovery Charge Qrr -- 2.2 -- uC Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. Essentially Independent of Operating Temperature. c. VDD = 50V, IAS=4A, L=27.5mH, RG=25 , Starting TJ = 25 oC d. Pulse width limited by junction temperature e. ISD ≤ 4A, di/dt ≤ 200A/us, VDD ≤ BVDSS) Starting TJ=25ºC |
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