TSM4N60

600V N-Channel Power MOSFET

1/11

Version: D10

TO-220

ITO-220

TO-251

(IPAK)

TO-252

(DPAK)

General Description

The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There

devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic

lamp ballasts base on half bridge topology.

Features

●

Robust high voltage termination

●

Avalanche energy specified

●

Diode is characterized for use in bridge circuits

●

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Ordering Information

Part No.

Package

Packing

TSM4N60CZ C0

TO-220

50pcs / Tube

TSM4N60CZ C0G

TO-220

50pcs / Tube

TSM4N60CI C0

ITO-220

50pcs / Tube

TSM4N60CI C0G

ITO-220

50pcs / Tube

TSM4N60CH C5

TO-251

75pcs / Tube

TSM4N60CH C5G

TO-251

75pcs / Tube

TSM4N60CP RO

TO-252

2.5Kpcs / 13” Reel

TSM4N60CP ROG

TO-252

2.5Kpcs / 13” Reel

Note: “G” denotes for Halogen Free

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

4

A

Pulsed Drain Current

16

A

Single Pulse Drain to Source Avalanche Energy (note c)

EAS

120

mJ

Avalanche Current, Repetitive or Not-Repetitive (note d)

IAR

10

mJ

Peak Diode Recovery dv/dt (note e)

dv/dt

4.5

V/ns

Total Power Dissipation

TO-220 / TO-251 / TO-252

70

W

ITO-220

25

Operating Junction Temperature

+150

Operating Junction and Storage Temperature Range

-55 to +150

Block Diagram

N-Channel MOSFET

PRODUCT SUMMARY

600

2

Pin Definition:

1. Gate

2. Drain

3. Source