SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

Datasheet 4118, Rev. D.2

© 2004 Sensitron Semiconductor

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SPM6M080-010D

Three-Phase MOSFET BRIDGE, With Gate Driver and Optical

Isolation

DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE

ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

(Tj=25

P

R

S

L

M

N

T

P

M

X

U

T

MOSFET SPECIFICATIONS

Drain-to-Source Breakdown Voltage

100

-

-

V

Continuous Drain Current

-

-

80

70

A

Pulsed Drain Current, Pulse Width limited to 1 msec

-

-

200

A

Zero Gate Voltage Drain Current

-

-

1

3

mA

mA

Static Drain-to-Source On Resistance,

-

0.009

0.018

0.012

-

Ω

Maximum Thermal Resistance

-

-

0.65

Maximum operating Junction Temperature

-40

-

150

Maximum Storage Junction Temperature

-55

-

150