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HMC409LP4 Datasheet(PDF) 5 Page - Hittite Microwave Corporation

Part # HMC409LP4
Description  GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
PDF  8 Pages
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Manufacturer  HITTITE [Hittite Microwave Corporation]
Direct Link  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC409LP4 Datasheet(HTML) 5 Page - Hittite Microwave Corporation

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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 5
Outline Drawing
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe.
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pCB rf GroUnD.
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
lAnD pATTern.
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
rf input power (rfin)(Vs = Vpd = +5Vdc)
+10 dBm
Junction Temperature
150 °C
Continuous pdiss (T = 85 °C)
(derate 57.5 mw/°C above 85 °C)
3.74 w
Thermal resistance
(junction to ground paddle)
17.4 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-40 to +85 °C
Vs (Vdc)
icq (mA)
4.75
516
5.0
615
5.25
721
Typical Supply, Current vs. Supply
Voltage, Vcc1 = Vcc2 = Vpd
HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
part number
package Body material
lead finish
msl rating
package marking [3]
HmC409lp4
low stress injection molded plastic
sn/pb solder
msl3
[1]
H409
XXXX
HmC409lp4e
roHs-compliant low stress injection molded plastic
100% matte sn
msl3
[2]
H409
XXXX
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions



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