For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

7

7 - 2

Electrical Specifications

T

parameter

Vdd = 3 Vdc

Units

min.

Typ.

max.

min.

Typ.

max.

min.

Typ.

max.

frequency range

1200 - 1700

1700 - 2000

2000 - 2200

mHz

Gain

18

22

15

18

12.5

15.8

dB

Gain Variation over Temperature

0.009

0.009

0.009

dB/°C

Noise figure

0.8

1.1

0.9

1.2

0.9

1.2

dB

input return loss

26

17

19

dB

output return loss

14

13

11

dB

output power for 1 dB

Compression (p1dB)

10

15

12

15

13

15

dBm

saturated output power (psat)

16

16

16

dBm

output Third order intercept (ip3)

28

28

28

dBm

supply Current (idd)

47

65

47

65

47

65

mA

* rbias resistor sets current, see application circuit herein

-25

-15

-5

5

15

25

0.8

1

1.2 1.4 1.6 1.8

2

2.2 2.4 2.6 2.8

3

Vdd=5V

Vdd=3V

FREQUENCY (GHz)

S21

S22

S11

12

14

16

18

20

22

24

1.6

1.7

1.8

1.9

2

2.1

2.2

2.3

+25C

+85C

- 40C

FREQUENCY (GHz)

10

12

14

16

18

20

22

1.6

1.7

1.8

1.9

2

2.1

2.2

2.3

+25C

+85C

- 40C

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

1.6

1.7

1.8

1.9

2

2.1

2.2

2.3

+25C

+85C

- 40C

FREQUENCY (GHz)

[1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm

HMC618LP3 / 618LP3E

v08.1210

GaAs SMT pHEMT LOW NOISE

AMPLIFIER, 1.2 - 2.2 GHz

1700 to 2200 MHz Tune