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BA159 Datasheet(PDF) 1 Page - Naina Semiconductor ltd.

Part # BA159
Description  Fast Recovery Diode, 1.0A
PDF  2 Pages
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Manufacturer  NAINA [Naina Semiconductor ltd.]
Direct Link  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

BA159 Datasheet(HTML) 1 Page - Naina Semiconductor ltd.

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Naina Semiconductor
1
D-95, Sector 63, Noida
sales@nainasemi.com
Fast Recovery Diode
Features
•
Diffused junction
•
High efficiency
•
Low forward voltage drop
•
Low power loss
•
High surge current capability
Mechanical Characteristics
•
Case: Molded Plastic
•
Cathode indicated by Polarity band
•
Mounting position: Any
•
Terminals: Finish Tin plated, Solderable
MIL-STD-202, Method 208
•
Weight: 0.33 grams (approx.)
Maximum Ratings (TA = 25
0C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output current
Peak forward surge current (8.3ms) single half sine
superimposed on rated load
Thermal and Mechanical Specifications (TA
Parameters
Typical thermal resistance, junction to ambient
Operating and Storage temperature range
Electrical Characteristics (TA = 25
0C unless otherwise
Parameters
Maximum DC forward voltage drop @ 1.0A
Maximum DC reverse current @ rated DC blocking
voltage
Maximum reverse recovery time
emiconductor Ltd.
Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120
sales@nainasemi.com
•
www.nainasemi.com
Fast Recovery Diode, 1.0A
, Solderable per
C unless otherwise specified)
Symbol
VRRM
VRMS
VDC
@ TA = 50
0C
IF(AV)
ms) single half sine-wave
IFSM
A = 25
0C unless otherwise specified)
Symbol
Typical thermal resistance, junction to ambient
RθJA
TJ , TStg
- 6
C unless otherwise specified)
Symbol
A DC
VF
Maximum DC reverse current @ rated DC blocking
TA = 25
0C
IR
TA = 100
0C
tRR
DO
BA159
4205450
•
Fax: 0120-4273653
BA159
Units
1000
V
700
V
1000
V
1.0
A
30
A
Values
Units
65
0C/W
65 to + 150
0C
BA159
Units
1.2
V
5.0
µA
50
500
ns
O-41


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