Document Number: 91321

www.vishay.com

S10-1139-Rev. C, 17-May-10

1

Power MOSFET

IRLR014, IRLU014, SiHLR014, SiHLU014

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

• Surface Mount (IRLR014, SiHLR014)

• Straight Lead (IRLU014, SiHLU014)

• Available in Tape and Reel

• Logic-Level Gate Drive

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRLU, SiHLU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

60

0.20

8.4

3.5

6.0

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

G

D S

S

D

G

D

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free and Halogen-free

SiHLR014-GE3

-

SiHLR014TRL-GE3

SiHLU014-GE3

Lead (Pb)-free

IRLR014PbF

IRLU014PbF

SiHLR014-E3

SiHLU014-E3

SnPb

IRLR014

IRLU014

SiHLR014

SiHLU014

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 10

Continuous Drain Current

7.7

A

4.9

31

Linear Derating Factor

0.20

W/°C

0.020

27.4

mJ

Maximum Power Dissipation

25

W

2.5

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply