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Document Number: 73057

S09-1453-Rev. B, 03-Aug-09

Vishay Siliconix

SiP12101

Notes:

a. Device mounted with all leads soldered or welded to PC board.

b. Derate 7.4 mW/°C above 85 °C.

c. Derate 14 mW/°C above 85 °C.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit

Unit

Voltages Referenced to AGND = 0 V

6.2

V

- 0.3 to 6.2

GND

- 0.3 to + 0.3

ESD Rating

2kV

Storage Temperature

- 65 to 125

°C

Operating Junction Temperature

150

481

mW

10-pin MLP33

915

Thermal Impedance (

Θ

10-Pin MSOP

135

°C/W

Peak Inductor Current

1.8

A

RECOMMENDED OPERATING RANGE

Parameter

Limit

Unit

2.6 to 5.5

V

10 µF ceramic

4.7 µF ceramic

Inductor

2.2

µH

Load Current

0 to 600

mA

SPECIFICATIONS

Parameter

Symbol

Test Conditions Unless Specified

L = 2.2 µH, 2.6 V

≤ V

Limits

Unit

Under Voltage Lockout (UVLO)

Under Voltage Lockout (turn-on)

2.3

2.5

V

Hysteresis

0.1

Shutdown (SD)

Logic High

1.6

V

Logic Low

0.4

Settle within ± 2 % accuracy SD rising

100

µs

100

Pull Down

µA

Oscillator

Frequency

1.622.4

MHz

Error Amplifier (FB Pin)

FB Voltage Accuracy

1.185

1.215

1.245

V

1.260

Power Supply Rejection

PSRR

60

db

Input Bias Current

- 1

0.01

1

µA