SIR640DP datasheet(2/13 Pages) VISHAY

2 / 13 page

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Document Number: 67190

S11-0247-Rev. A, 14-Feb-11

Vishay Siliconix

SiR640DP

New Product

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VGS(th) Temperature Coefficient

V

GS(th)/TJ

ID = 250 µA

- 5.3

mV/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

2.3

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

µA

VDS = 40 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS 5 V, VGS = 10 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 20 A

0.0014

0.0017



VGS = 4.5 V, ID = 20 A

0.0018

0.0022

Forward Transconductancea

gfs

VDS = 15 V, ID = 20 A

110

Dynamicb

Input Capacitance

Ciss

VDS = 20 V, VGS = 0 V, f = 1 MHz

4930

Output Capacitance

Coss

3810

Reverse Transfer Capacitance

Crss

314

Total Gate Charge

VDS = 20 V, VGS = 10 V, ID = 20 A

113

VDS = 20 V, VGS = 4.5 V, ID = 20 A

34.6

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

8.2

Gate Resistance

f = 1 MHz

0.4

1.3

2.6



Turn-On Delay Time

td(on)

VDD = 20 V, RL = 2 

ID  10 A, VGEN = 10 V, Rg = 1 

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Turn-On Delay Time

td(on)

VDD = 20 V, RL = 2 

ID  10 A, VGEN = 4.5 V, Rg = 1 

Rise Time

170

Turn-Off Delay Time

td(off)

110

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

Pulse Diode Forward Currenta

ISM

100

Body Diode Voltage

VSD

IS = 5 A

0.69

1.1

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

160

Body Diode Reverse Recovery Charge

Qrr

150

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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