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SIR640DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIR640DP Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 13 page ![]() Document Number: 67190 S11-0247-Rev. A, 14-Feb-11 www.vishay.com 3 Vishay Siliconix SiR640DP New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 16 32 48 64 80 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 10 V thru 3 V VGS =2V V DS - Drain-to-Source Voltage (V) 0.0012 0.0014 0.0016 0.0018 0.0020 0.0022 0 16324864 80 VGS =10V VGS =4.5 V I D - Drain Current (A) 0 2 4 6 8 10 0 16324864 80 ID =20A VDS =20V VDS =30V VDS =10 V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 01 2 3 45 TC = 125 °C TC = 25 °C TC = - 55 °C V GS - Gate-to-Source Voltage (V) Crss 0 1600 3200 4800 6400 8000 0 8 16 24 32 40 Ciss Coss V DS - Drain-to-Source Voltage (V) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 ID =20A VGS =4.5 V VGS =10V T J - Junction Temperature (°C) |
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