CSD86330Q3D datasheet(7/20 Pages) TI

7 / 20 page

VDS - Drain-to-Source Voltage - V

0.001

0.01

0.1

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G016

f = 1MHz

VGS = 0V

VDS - Drain-to-Source Voltage - V

0.01

0.1

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G017

f = 1MHz

VGS = 0V

TC - Case Temperature - °C

-75

-25

125

175

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

G018

ID = 250µA

TC - Case Temperature - °C

-75

-25

125

175

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

G019

ID = 250µA

VGS - Gate-to-Source Voltage - V

TC = 25°C

TC = 125°C

G020

ID = 14A

VGS - Gate-to-Source Voltage - V

TC = 25°C

TC = 125°C

G021

ID = 14A

CSD86330Q3D

www.ti.com

SLPS264C

– OCTOBER 2010 – REVISED OCTOBER 2011

TYPICAL POWER BLOCK MOSFET CHARACTERISTICS (continued)

TA = 25°C, unless stated otherwise.

TEXT ADDED FOR SPACING

Figure 16. Control MOSFET Capacitance

Figure 17. Sync MOSFET Capacitance

TEXT ADDED FOR SPACING

Figure 18. Control MOSFET VGS(th)

Figure 19. Sync MOSFET VGS(th)

TEXT ADDED FOR SPACING

Figure 20. Control MOSFET RDS(on) vs VGS

Figure 21. Sync MOSFET RDS(on) vs VGS

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