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CSD86330Q3D Datasheet(PDF) 3 Page - Texas Instruments |
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CSD86330Q3D Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 20 page ![]() HD HG LG LD M0205-01 LS HS HD HG LG LD M0206-01 LS HS CSD86330Q3D www.ti.com SLPS264C – OCTOBER 2010 – REVISED OCTOBER 2011 ELECTRICAL CHARACTERISTICS TA = 25°C (unless otherwise stated) Q1 Control FET Q2 Sync FET PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = 250µA 25 25 V Drain to Source Leakage IDSS VGS = 0V, VDS = 20V 1 1 µA Current Gate to Source Leakage IGSS VDS = 0V, VGS = +10 / –8 100 100 nA Current Gate to Source Threshold VGS(th) VDS = VGS, IDS = 250µA 0.9 1.4 2.1 0.9 1.1 1.6 V Voltage VIN = 12V, VGS = 5V, VOUT = 1.3V, IOUT = 15A, ZDS(on) Effective AC On-Impedance 8.8 3.3 m Ω fSW = 500kHz, LOUT = 1µH gfs Transconductance VDS = 15V, IDS = 14A 52 82 S Dynamic Characteristics CISS Input Capacitance(1) 710 920 1280 1660 pF COSS Output Capacitance(1) VGS = 0V, VDS = 12.5V, 350 455 680 880 pF f = 1MHz Reverse Transfer CRSS 18 23 38 49 pF Capacitance(1) RG Series Gate Resistance(1) 1.5 3.0 1.2 2.4 Ω Qg Gate Charge Total (4.5V)(1) 4.8 6.2 9.2 12 nC Qgd Gate Charge - Gate to Drain 0.9 1.6 nC VDS = 12.5V, Gate Charge - Gate to IDS = 14A Qgs 1.6 2.1 nC Source Qg(th) Gate Charge at Vth 0.9 1.2 nC QOSS Output Charge VDS = 15.5V, VGS = 0V 7.2 13.6 nC td(on) Turn On Delay Time 4.9 5.3 ns tr Rise Time 7.5 6.3 ns VDS = 12.5V, VGS = 4.5V, IDS = 14A, RG = 2Ω td(off) Turn Off Delay Time 8.5 15.8 ns tf Fall Time 1.9 4.2 ns Diode Characteristics VSD Diode Forward Voltage IDS = 14A, VGS = 0V 0.85 1 0.8 1 V Qrr Reverse Recovery Charge 3.9 7.3 nC Vdd = 15.5V, IF = 14A, di/dt = 300A/ µs trr Reverse Recovery Time 13.9 19 ns (1) Specified by design Max RθJA = 76°C/W Max RθJA = 140°C/W when mounted on when mounted on 1 inch2 (6.45 cm2) of minimum pad area of 2-oz. (0.071-mm thick) 2-oz. (0.071-mm thick) Cu. Cu. Copyright © 2010–2011, Texas Instruments Incorporated Submit Documentation Feedback 3 |
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