Semiconductor Group

1

Jan-20-1997

BFP 136W

NPN Silicon RF Transistor

• For power amplifier in DECT and PCN systems

• Gold metalization for high reliability

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFP 136W

PAs

Q62702-F1575

1 = E

2 = C

3 = E

4 = B

SOT-343

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

12

V

Collector-emitter voltage

20

Collector-base voltage

20

Emitter-base voltage

2

Collector current

150

mA

Base current

20

Total power dissipation

1000

mW

Junction temperature

150

°C

Ambient temperature

- 65 ... + 150

Storage temperature

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

≤ 90

K/W

1)