MMBT2222AT

NPN Silicon

General Purpose Transistors

Elektronische Bauelemente

17-Aug-2011 Rev. A

Page 1 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

2

Emitter

Collector

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Epitaxial Planar Die Construction

Complementary PNP Type Available(MMBT2907FW)

Ideal for Medium Power Amplification and Switching

MARKING CODE

1P

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-523

3K

7 inch

Parameter

Symbol

Ratings

Unit

Collector - Emitter Voltage

40

V

Collector - Base Voltage

75

V

Emitter - Base Voltage

6

V

Collector Current - Continuous

600

mA

1

150

mW

Thermal Resistance, Junction to Ambient

833

°C / W

Junction & Storage Temperature

-55~150

°C

Note:

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.

SOT-523

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.50

1.70

K

0.30

0.50

B

0.75

0.95

M

---

10

o

C

0.60

0.80

N

---

10

o

D

0.23

0.33

S

1.50

1.70

G

0.50BSC

J

0.10

0.20