MMBT2222AT datasheet(2/5 Pages) SECOS

2 / 5 page

MMBT2222AT

NPN Silicon

General Purpose Transistors

Elektronische Bauelemente

17-Aug-2011 Rev. A

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Off Characteristics

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=10 mA, IB=0

Collector-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0

Emitter-Base Breakdown Voltage

V(BR)EBO

IE= -10 µA, IC=0

Collector Cut-Off Current

IBL

VCE=60V, VEB=3V

Emitter Cut-Off Current

ICEX

100

VCE=60V, VBE=3V

On Characteristics

DC Current Gain

hFE

IC=0.1mA, VCE=10V

IC=1mA, VCE=10V

IC=10mA, VCE=10V

100

IC=150mA, VCE=10V

IC=500mA, VCE=10V

Collector-Emitter Saturation Voltage

VCE(sat)

0.3

IC=150mA, IB=15mA

IC=500mA, IB=50mA

Base-Emitter Saturation Voltage

VBE(sat)

0.6

1.2

IC=150mA, IB=15mA

IC=500mA, IB=50mA

Small-Signal Characteristics

Curren-Gain-Bandwidth Product

250

MHz

VCE=20V, IC=20mA,

f=100MHz

Output Capacitance

Cobo

VCB=10V, IE=0, f =1.0 MHz

Input Capacitance

Cibo

VBE=0.5V, IE=0, f =1.0 MHz

Input Impedancen

hie

0.25

1.25

VCE=10V, IC=10mA, f=1.0kHz

Voltage Feedback Ratio

hre

X10

-4

VCE=10V, IC=10mA, f=1.0kHz

Small-Signal Current Gain

hfe

375

VCE=10V, IC=10mAdc, f=1.0kHz

Output Admittance

hoe

200

µmhos VCE=10V, IC=10mAdc, f=1.0kHz

Noise Figure

4.0

VCE=10V, IC=100µA,

RS=1K , f=1.0kHz

Switching Characteristics

Delay Time

VCC=3V, VBE= -0.5 V,

IC=150mA, IB1=15mA

Rise Time

Storage Time

225

VCC=30V, IC=150mA,

IB1=IB2=15mA

Fall Time

Note:

1. Pulse Test: Pulse Width ≤ 300s, Duty Cycle ≤ 2.0%.

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