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SSD40P04 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSD40P04 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() SSD40P04-20DE -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 2-Dec-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-252(D-Pack) A C D N O P G E F H K J M B RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-252 saves board space. Fast Switch Speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 ID -36 A Pulsed Drain Current @TA=25°C 2 IDM -40 A Continuous Source Current (Diode Conduction) 1 IS -30 A Total Power Dissipation @TA=25°C 1 PD 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 1 Gate 3 Source 2 Drain |
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Similar Description - SSD40P04_11 |
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