SSD40P04_11 datasheet(2/4 Pages) SECOS

2 / 4 page

SSD40P04-20DE

-36A , -40V , RDS(ON) 30m

P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

2-Dec-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

-1

VDS= VGS, ID = -250µA

Gate-Body Leakage

IGSS

±100

VDS =0, VGS= ±25V

Zero Gate Voltage Drain Current

IDSS

-1

µA

VDS= -24V, VGS=0

-5

VDS= -24V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

-41

VDS = -5V, VGS= -10V

Drain-Source On-Resistance

RDS(ON)

VGS= -10V, ID= -36A

VGS= -4.5V, ID= -29A

Forward Transconductance

gfs

VDS= -15V, ID= -36A

Diode Forward Voltage

VSD

-0.7

IS= -41A, VGS=0

Dynamic

Total Gate Charge

13.9

VDS= -15V

VGS= -4.5 V

ID= -36A

Gate-Source Charge

Qgs

5.2

Gate-Drain Charge

Qgd

5.8

Input Capacitance

Ciss

1583

4000

VDS= -15V,

VGS=0,

f=1MHz

Output Capacitance

Coss

278

600

Reverse Transfer Capacitance

Crss

183

400

Turn-on Delay Time

Td(on)

VDD= -15V

ID= -41A

VGEN = -10 V

RL=15 

RG=6

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：Pulse width ≦ 300 µs, duty cycle ≦ 2％.

Guaranteed by design, not subject to production testing.

SSD40P04 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSD40P04 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4

Datasheet Download

Link URL