SSG4520H datasheet(1/6 Pages) SECOS

Part #	SSG4520H

Description	N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 6 page

Elektronische Bauelemente

SSG4520H

N-Ch: 6.6A, 20V, RDS(ON) 47 m

P-Ch: -5.2A, -20V, RDS(ON) 79 m

N & P-Ch Enhancement Mode Power MOSFET

10-Jan-2012 Rev. D

Page 1 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs

utilize a high cell density trench process to provide low

RDS(on) and to ensure minimal power loss and heat

dissipation.

FEATURES



Low RDS(on) provides higher efficiency and

extends battery life.



Low thermal impedance copper leadframe

SOP-8 saves board space



Fast switching speed



High performance trench technology

APPLICATION

DC-DC converters and power management in

portable and battery-powered products such as computers,.

printers, PCMCIA cards, cellular and cordless telephones

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Rating

Parameter

Symbol

N-CH

P-CH

Unit

Drain-Source Voltage

VDS

20

-20

V

Gate-Source Voltage

VGS

±8

V

TA = 25°C

6.6

-5.2

A

Continuous Drain Current

1

TA = 70°C

ID

5

-3.8

A

Pulsed Drain Current

2

IDM

20

-20

A

Continuous Source Current (Diode Conduction)

1

IS

2.2

-2.2

A

TA = 25°C

2.1

W

Total Power Dissipation

1

TA = 70°C

PD

1.3

W

Operating Junction & Storage Temperature Range

TJ, TSTG

-55 ~ 150

°C

Thermal Resistance Ratings

t≦10 sec

62.5

°C / W

Maximum Junction-to-Ambient 1

Steady State

RθJA

110

°C / W

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.8

6.20

H

0.35

0.51

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D0°

8°

L

1.35

1.75

E

0.50

0.93

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

SOP-8

Top View

Similar Part No. - SSG4520H

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	SSG4520H	1Mb / 6P	N & P-Ch Enhancement Mode Power MOSFET
SHENZHEN DOINGTER SEMIC...	SSG4520H	2Mb / 9P	N-Channel and P-Channel MOSFET use advanced trench technology
SeCoS Halbleitertechnol...	SSG4520H	440Kb / 6P	N & P-Ch Enhancement Mode Power MOSFET

More results

Similar Description - SSG4520H

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	SDN520C	84Kb / 2P	N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
	SSD40P04	1Mb / 4P	-36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET
	SSG4407P	548Kb / 4P	-15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET
	SSG4502CE	3Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
	SSG4512CE	3Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
	SSG9435BDY	616Kb / 4P	-5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET
	SSPS7321P	525Kb / 4P	-13A , -20V , RDS(ON) 14 m P-Ch Enhancement Mode Power MOSFET
	SST3585	654Kb / 7P	3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
	STT3585	664Kb / 7P	3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
	STT6602	2Mb / 7P	N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

More results

SSG4520H Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

SSG4520H Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - SSG4520H

Similar Description - SSG4520H

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL