R5F2136CSNFA datasheet(38/61 Pages) RENESAS

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R8C/36T-A Group

4. Electrical Characteristics

R01DS0055EJ0100 Rev.1.00

Page 38 of 58

Dec 09, 2011

Notes:

1. Definition of programming/erasure endurance

The programming and erasure endurance is defined on a per-block basis.

If the programming and erasure endurance is n (n = 100, 1,000 or 10,000), each block can be erased n times. For example, if

1,024 1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the

programming/erasure endurance still stands at one.

However, the same address must not be programmed more than once per erase operation (overwriting prohibited).

2. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential

addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,

when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups

before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A to D can further

reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the

number of erase operations to a certain number.

4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase

command at least three times until the erase error does not occur.

5. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

6. The data hold time includes time that the power supply is off or the clock is not supplied.

7. The data hold time includes 7,000 hours under an environment of ambient temperature 85°C.

Table 4.6

Flash Memory (Data flash Block A to Block D) Characteristics

(Vcc = 2.7 V to 5.5 V, Topr =

20°C to 85°C (N version)/40°C to 85°C (D version),

unless otherwise specified)

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

―

Program/erase endurance (1)

10,000 (2)

――

times

―

Byte program time

(Program and erase endurance

 1,000

times)

―

160

950

μs

―

Byte program time

(Program and erase endurance > 1,000

times)

―

300

950

μs

―

Block erase time

(Program and erase endurance

 1,000

times)

―

0.2

―

Block erase time

(Program and erase endurance > 1,000

times)

―

0.3

td(SR-SUS)

Time delay from suspend request until

suspend

――

3 + CPU clock

× 3 cycles

―

Interval from erase start/restart until

following suspend request

――

μs

―

Time from suspend until erase restart

――

30 + CPU clock

× 1 cycle

μs

td(CMDRST

-READY)

Time from when command is forcibly

terminated until reading is enabled

――

30 + CPU clock

× 1 cycle

μs

―

Program, erase voltage

2.7

―

5.5

―

Read voltage

1.8

―

5.5

―

Program, erase temperature

20 (N ver.)

40 (D ver.)

―

°C

―

Data hold time (6)

Ambient temperature

= 55°C (7)

――

year

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