2SA1627AL-X-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SA1627A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R217-004.D

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-600

Collector-Emitter Voltage

VCEO

-600

Emitter-Base Voltage

VEBO

-7.0

Collector Power Dissipation

TO-126/TO-126C

1.0

TO-252

1.9

Collector Current (DC)

-1.0

Collector Current (Pulse) (Note 2)

ICP

-2.0

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. PW≦10ms, Duty Cycle≦50%

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Cut-Off Current

ICBO

VCB= -600V, IE=0

-10

µA

Emitter Cut-Off Current

IEBO

VEB= -7.0V, IC=0

-10

µA

DC Current Gain (Note 2)

hFE1

VCE= -5.0V, IC= -0.1A

120

hFE2

VCE= -5.0V, IC= -0.5A

Collector-Emitter Saturation Voltage(Note)

VCE(SAT)

IC= -0.3A, IB= -0.06A

-0.28 -1.5

Base-Emitter Saturation Voltage(Note)

VBE(SAT)

IC= -0.3A, IB= -0.06A

-0.85 -1.2

Gain Bandwidth Product

VCE= -10V, IE=0.1A

MHz

Output Capacitance

COB

VCB= -10V, IE=0, f=1.0MHz

Turn-On Time

tON

IC=-0.5A, RL=500Ω,

IB1= -IB2= -0.1A, VCC =-250V

0.1

0.5

µs

Storage Time

TSYG

3.5

5.0

µs

Fall Time

0.08 0.5

µs

Note: Pulsed PW≦350µs,Duty Cycle≦2%

CLASSIFICATION OF hFE1

RANK

RANGE

30-60

40-80

60-120

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