2SA1627AL-X-TN3-R datasheet(3/4 Pages) UTC

Part #	2SA1627AL-X-TN3-R

Description	PNP EPITAXIAL SILICON TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 4 page

2SA1627A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R217-004.D

TYPICAL CHARACTERISTICS

-2.0

Collector Current vs.

Collector to Emitter Voltage

Collector to Emitter Voltage, VCE (V)

-6.0

-10

-4.0

-8.0

-20

-40

-60

-80

-100

IB=1.8mA

IB=1.6mA

IB=1.4mA

IB=1.2mA

IB=1.0mA

IB=0.8mA

IB=0.6mA

IB=0.4mA

IB=0.2mA

-0.005

-0.002

DC Current Gain vs. Collector Current

Collector Current, IC (A)

-0.1

-0.02

-0.5

100

300

1000

-0.01

-0.05

-2.0

-0.2

-1.0

VCE=-5.0V

Collector Current vs.

Base to Emitter Voltage

Base to Emitter Voltage, VBE (V)

-0.01

-0.1

-0.3

-1.0

-0.4

-0.8

-1.2

-1.6

-0.03

-0.003

-0.2

-0.6

-1.0

-1.4

VCE=-5.0V

Collector and Base Saturation Voltage

vs. Collector Current

Collector Current, IC (A)

-0.1

-0.3

-1.0

-3.0

-0.005 -0.01

-0.05

-0.2

-0.03

-0.02

-0.1

-0.5

IC=5IB

VBE(SAT)

VCE(SAT)

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