MMZ09312BT1

1

RF Device Data

Freescale Semiconductor, Inc.

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT

amplifier designed for use as a linear driver amplifier in wireless base station

applications as well as an output stage in femtocell or repeater applications. It

is suitable for applications with frequencies from 400 to 1000 MHz such as

amplifier is housed in a cost--effective, surface mount QFN plastic package.

Frequency

(dBm)

(dB)

ACPR

(dBc)

PAE

(%)

Test Signal

900 MHz

24

31.5

--50.0

26.0

IS--95 CDMA

750 MHz

17.5

32.0

--50.0

15.3

LTE

10/20 MHz

450 MHz

29

33.0

--40.0

57.0

ZigBee

Features

• Frequency: 400--1000 MHz

• P1dB: 29.6 dBm @ 900 MHz

• Power Gain: 31.7 dB @ 900 MHz

• OIP3: 42 dBm @ 900 MHz

• Active Bias Control (adjustable externally)

• Single 3 to 5 Volt Supply

• Performs Well with Digital Predistortion Systems

• Single--ended Power Detector

• Cost--effective QFN Surface Mount Package

• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

Characteristic

Symbol

450

MHz

900

MHz

Unit

Small--Signal Gain (S21)

33.8

31.7

dB

Input Return Loss (S11)

IRL

--22

--15

dB

Output Return Loss (S22)

ORL

--25

--18

dB

Power Output @ 1dB

Compression

P1dB

28.8

29.6

dBm

Application Circuit

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

6

V

Supply Current

550

mA

RF Input Power

14

dBm

Storage Temperature Range

--65 to +150

°C

150

°C

2. For reliable operation, the junction temperature should not

exceed 150°C.

Table 3. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

56

°C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Freescale Semiconductor

Technical Data

Document Number: MMZ09312B

Rev. 1, 2/2012

400--1000 MHz, 31.7 dB

29.6 dBm

InGaP HBT

MMZ09312BT1

CASE 2131--01

QFN 3x3

PLASTIC

© Freescale Semiconductor, Inc., 2011--2012. All rights reserved.