INA129MDREP datasheet(4/22 Pages) TI1

4 / 22 page

INA129-EP

SBOS508 – DECEMBER 2009

www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

At TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted)

Boldface limits apply over the specified temperature range, TA = –55°C to 125°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Gain vs temperature(2)

G = 1

±1

±10

ppm/°C

49.4-k

Ω resistance(2) (3)

±25

±100

ppm/°C

VO = ±13.6 V,

±0.0001

±0.0018

G = 1

Over temperature

±0.0035

G = 10

±0.0003

±0.0035

Nonlinearity

% of FSR

Over temperature

±0.0055

G = 100

±0.0005

±0.0035

Over temperature

±0.0055

G = 1000

±0.001

See (4)

OUTPUT

Positive

RL = 10 kΩ

(V+)

− 1.4

(V+)

− 0.9

Voltage

Negative

RL = 10 kΩ

−) + 1.4

−) + 0.8

Load capacitance stability

1000

Short-curcuit current

+6/

−15

FREQUENCY RESPONSE

G = 1

1300

G = 10

700

Bandwidth,

−3 dB

kHz

G = 100

200

G = 1000

VO = ±10 V,

Slew rate

V/µs

G = 10

G = 1

G = 10

Settling time, 0.01%

µs

G = 100

G = 1000

Overload recovery

50% overdrive

µs

POWER SUPPLY

Voltage range

±2.25

±15

±18

VIN = 0 V

±700

±750

Current, total

µA

Over temperature

±1200

TEMPERATURE RANGE

Specification

−55

125

°C

Operating

−55

125

°C

8-pin DIP

θJA

°C/W

SO-8 SOIC

150

(2)

Specified by wafer test.

(3)

Temperature coefficient of the 49.4-k

Ω term in the gain equation.

(4)

Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.

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