SQJ970EP datasheet(4/9 Pages) VISHAY

4 / 9 page

SQJ970EP

www.vishay.com

Vishay Siliconix

S11-2419-Rev. C, 19-Dec-11

Document Number: 65282

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Drain Current

Source Drain Diode Forward Voltage

On-Resistance vs. Junction Temperature

Drain-Source Breakdown vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

0.00

0.02

0.04

0.06

0.08

0.10

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

175

ID = 10.2 A

VGS =10 V

TJ - Junction Temperature (°C)

- 50

- 25

100

125

150

175

ID =1mA

TJ - Temperature (°C)

0.00

0.03

0.06

0.09

0.12

0.15

012

345

TJ = 125 °C

TJ = 25 °C

VGS - Gate-to-Source Voltage (V)

- 1.2

- 0.9

- 0.6

- 0.3

0.0

0.3

0.6

- 50

- 25

100

125

150

175

ID =5mA

ID = 250 µA

TJ - Temperature (°C)

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