2SC6100

2010-06-22

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6100

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

•

•

•

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

Collector-emitter voltage

80

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

DC

2.5

Collector current

Pulse

4.0

A

Base current

250

mA

800

Collector power dissipation

500

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note1: Mounted on ceramic board.

(25.4 mm

Note2: Mounted on FR4 board.

(25.4 mm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2U1A

Weight: 6.6 mg (typ.)

1.7±0.1

2.1±0.1

1

2

3

1 :Base

2 :Emitter

3 :Collector

UFM