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2SC6126 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC6126
Description  High-Speed Switching Applications DC-DC Converter Applications LCD Backlighting Applications
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6126 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC6126
2009-07-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 120 V, IE = 0
⎯
⎯
100
nA
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
⎯
⎯
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
⎯
⎯
V
hFE (1)
VCE = 2 V, IC = 0.3 A
250
⎯
400
DC current gain
hFE (2)
VCE = 2 V, IC = 1.0 A
100
⎯
⎯
Collector emitter saturation voltage
VCE (sat)
IC = 1.0 A, IB = 33 mA
⎯
⎯
0.18
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.0 A, IB = 33 mA
⎯
⎯
1.1
V
Collector output capacitance
Cob
VCB = 10 V, IE =0 ,f=1 MHz
⎯
10.5
⎯
pF
Rise time
tr
⎯
30
⎯
Storage time
tstg
⎯
500
⎯
Switching time
Fall time
tf
See Figure 1 circuit diagram
VCC ∼− 20 V、RL = 20 Ω
IB1 = 33 mA
IB2 = 33 mA
⎯
40
⎯
ns
Figure 1. Switching Time Test Circuit & Timing Chart
Marking
Note4 :A line to the right of a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
IB2
IB1
20
μs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%
4
M
Part No. (or abbreviation code)
Lot No.
Note4



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