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2SC6142 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC6142
Description  High Voltage Switching Applications
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6142 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC6142
2010-04-23
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 800 V, IE = 0
⎯
⎯
50
μA
Emitter cutoff current
IEBO
VEB = 8 V, IC = 0
⎯
⎯
100
nA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
800
⎯
⎯
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
375
⎯
⎯
V
hFE (1)
VCE = 5 V, IC = 1 mA
80
⎯
⎯
hFE (2)
VCE = 5 V, IC = 0.1 A
100
⎯
200
DC current gain
hFE (3)
VCE = 5 V, IC = 0.2 A
80
⎯
⎯
⎯
Collector emitter saturation voltage
VCE (sat)
IC = 0.8 A, IB = 0.1 A
⎯
⎯
0.9
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.8 A, IB = 0.1 A
⎯
⎯
1.3
V
Rise time
tr
⎯
0.2
⎯
Storage time
tstg
⎯
3.5
⎯
Switching time
Fall time
tf
IB1 = 20 mA, IB2 = 50 mA
Duty cycle ≤ 1%
⎯
0.15
⎯
μs
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note 3
Part No. (or abbreviation code)
Lot No.
20 μs
VCC ≈ 200 V
Input
Output
IB2
IB1
I
IC
0
C6142



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