2N2920AHR datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

2N2920AHR

Electrical characteristics

Doc ID 15383 Rev 2

3/9

Electrical characteristics

Tcase = 25 °C unless otherwise specified

Table 5.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector-base cut-off

current (IE = 0)

VCB = 45 V

TC = 150 °C

µA

ICEO

Collector cut-off

current (IB = 0)

VCE = 5 V

IEBO

Emitter-base cut-off

current (IC = 0)

VEB = 5 V

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 10 µA

V(BR)CEO

(1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = 10 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 1 mA

IB = 0.1 mA

0.35

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 1 mA

IB = 0.1 mA

0.5

hFE

(1)

DC current gain

IC = 10 µA

VCE = 5 V

IC = 100 µA

VCE = 5 V

IC = 1 mA

VCE = 5 V

IC = 10 µA

VCE = 5 V

Tamb = -55 °C

150

225

300

600

hFE2-1 / hFE2-2

DC current transfer

ratio comparison

IC = 100 µA

VCE = 5 V

Tamb = -55 °C to +25 °C

0.91

1.1

hFE2-1 / hFE2-2

DC current transfer

ratio comparison

IC = 100 µA

VCE = 5 V

Tamb = -55 °C to +125 °C

0.85

1.18

Δ⏐V

BE1 -

VBE2

⏐

Base-emitter voltage

differential

VCE = 5 V

IC = 10 µA

VCE = 5 V

IC = 100 µA

VCE = 5 V

IC = 1 mA

1.5

Δ⏐V

BE1 -

VBE2

⏐

Base-emitter voltage

differential

VCE = 5 V

IC = 100 µA

Tamb = -55 °C to +25 °C

Tamb = +25 °C to +125 °C

0.4

0.5

ILk

Leakage current

between active

devices

V = 50 V to E2, B2, C2

V = 0 V to E1, B1, C1

5µA

Transition frequency

IC = 0.5 mA

VCE = 5 V

MHz

2N2920AHR Datasheet(PDF) 3 Page - STMicroelectronics

2N2920AHR Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL