STPS30150C

Characteristics

Doc ID 7757 Rev 8

3/11

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test: tp = 5ms,

δ < 2%

Reverse leakage current

6.5

µA

8

mA

(2)

2.

Pulse test: tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation:

2

(RMS)

Forward voltage drop

0.92

V

0.69

0.75

1

0.8

0.86

Figure 1.

Average forward power dissipation

versus average forward current (per

diode)

Figure 2.

Average forward current versus

ambient temperature (

diode)

0

1

2

3

4

5

6

7

8

9

1011

1213

1415

1617

18

0

2

4

6

8

10

12

14

δ = 0.05

δ = 0.1 δ = 0.2

δ = 0.5

δ = 1

T

tp

P

(W)

F(AV)

I

(A)

F(AV)

0

2

4

6

8

10

12

14

16

18

0

25

50

75

100

125

150

175

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

Rth(j-a)=Rth(j-c)

TO-220FP

TO-220AB / TO-247 / D PAK

2

T

tp

I

(A)

F(AV)

T

(°C)

amb

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(tp)

P

(1 µs)

ARM

ARM

0

0.2

0.4

0.6

0.8

1

1.2

25

50

75

100

125

150

T (°C)

j

P(Tj)

P

(25 °C)

ARM

ARM