STEVAL-TDR007V1 datasheet(1/11 Pages) STMICROELECTRONICS

Part #	STEVAL-TDR007V1

Description	3 stage RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 11 page

March 2009

Rev 2

1/11

11

STEVAL-TDR007V1

3 stage RF power amplifier demonstration board using:

PD57002-E, PD57018-E, 2 x PD57060-E

Features

■ N-channel enhancement-mode lateral

MOSFETs

■ Excellent thermal stability

■ Frequency: 1030 MHz

■ Supply voltage: 36 V

■ Peak power: 200 W typical

■ Input power: 23 dBm

■ Harmonics < -45 dBc

■ Rise and fall time < 100 ns

■ RoHS compliant

Description

The STEVAL-TDR007V1 is a 200 W RF power

amplifier intended for IFF - 1030 MHz interrogator

using PD57002-E + PD57018-E + 2 x PD57060-E

N-channel lateral MOS field-effect transistors.

STEVAL-TDR007V1 is designed in cooperation

with ETSA in France.

Table 1.

Device summary

Order code

STEVAL-TDR007V1

www.st.com

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