PXS30 datasheet(89/139 Pages) FREESCALE

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Electrical characteristics

PXS30 Microcontroller Data Sheet, Rev. 1

Preliminary—Subject to Change Without Notice

Freescale Semiconductor

3.16

SRAM memory electrical characteristics

3.16.1

Read access timing

3.16.2

Write access timing

3.17

GP pads specifications

This section specifies the electrical characteristics of the GP pads. Please refer to the tables in Section 2.2,

Pin descriptions,” for a cross reference between package pins and pad types.

3.17.1

GP pads DC specifications

Table 34 gives the DC electrical characteristics at 3.3 V (3.0 V < VDD_HV_IO < 3.6 V).

Table 31. Data flash write access timing

No.

Symbol

Parameter

Condition

Value

Unit

Max

2fWRITE

CC Maximum frequency for Flash writing

(system clock frequency SYS_CLK)

TBD

MHz

TBD

MHz

Table 32. System SRAM memory read access timing

No.

Symbol

Parameter

Condition

Value

Unit

Max

2sREAD

CC Maximum frequency for system SRAM

reading (system clock frequency

SYS_CLK)

1 wait state

MHz

1 wait state

MHz

Table 33. System SRAM memory write access timing

No.

Symbol

Parameter

Condition

Value

Unit

Max

2sWRITE

CC Maximum frequency for system SRAM

writing (system clock frequency

SYS_CLK)

TBD

MHz

TBD

MHz

PXS30 Datasheet(PDF) 89 Page - Freescale Semiconductor, Inc

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