APT6030BN datasheet(2/4 Pages) COMSET

2 / 4 page

APT6030BN

22/10/2012

COMSET SEMICONDUCTORS

2/4

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VDSS

Drain-Source Breakdown

Voltage

ID= 250 µA, VGS= 0 V

600

VGS(th)

Gate-threshold Voltage

ID=1 mA, VDS= VGS

IDSS

Zero Gate Voltage Drain Current

VDS= 600 V, VGS= 0 V

Tj= 25 °C

250

µA

VDS= 0.8 VDSS, VGS= 0 V

Tj= 125 °C

IGSS

Gate-Source leakage Current

VGS= 30 V, VDS= 0 V

100

ID(on)

On State Drain Current

VGS= 30 V

VDS >ID(on)xRDS(on)Max

RDS(on)

Drain-Source on Resistance

0.5ID(Cont), VGS= 10 V

0.3

Ω

DYNAMIC CHARACTERISTICS

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

CISS

Input Capacitance

VGS= 0 V, VDS= 25 V

f= 1MHz

2905

3500

COSS

Output Capacitance

505

710

CRSS

Reverse transfer Capacitance

190

285

td(on)

Turn-on Delay Time

VDD= 300 V, VGS= 15 V

IDS= ID(Cont) @ 25°C

RGS= 1.8 Ω

Rise time

td(off)

Turn-off Delay Time

130

Fall Time

100

Total Gate Charge

VDD= 300 V, VGS= 10 V

IDS= ID(Cont) @ 25°C

140

210

Qgs

Gate Source Charge

Qgd

Gate-Drain Charge

110

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