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DTS2012 Datasheet(PDF) 1 Page - DinTek Semiconductor Co,.Ltd |
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DTS2012 Datasheet(HTML) 1 Page - DinTek Semiconductor Co,.Ltd |
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1 / 9 page  www.daysemi.jp 1 N-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • Typical ESD Protection 2000 V HBM • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Switch • Load Switch for Motors, Relays and Solenoids PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (Typ.) 30 0.045 at VGS = 10 V 4 4 nC 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Notes: a. Package limited, TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4a A TC = 70 °C 4a TA = 25 °C 4a, b, c TA = 70 °C 3.7b, c Pulsed Drain Current (t = 300 µs) IDM 20 Continuous Source-Drain Diode Current TC = 25 °C IS 2.3a TA = 25 °C 1.3b, c Maximum Power Dissipation TC = 25 °C PD 2.8 W TC = 70 °C 1.8 TA = 25 °C 1.56b, c TA = 70 °C 1.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C D S G THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 5 s RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 Top View SOT-323 SC-70 (3-LEADS) G S D 1 2 3 DTS www. daysemi.jp |
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