 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MAT01N Datasheet(PDF) 2 Page - Analog Devices |
|
|
|||||||||||||||||||||||||||||
MAT01N Datasheet(HTML) 2 Page - Analog Devices |
|
|
2 / 8 page  REV. A –2– MAT01–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ V CB = 15 V, IC = 10 A, TA = 25 C, unless otherwise noted.) MAT01AH MAT01GH Parameter Symbol Conditions Min Typ Max Min Typ Min Units Breakdown Voltage BVCEO IC = 100 µA45 45 V Offset Voltage VOS 0.04 0.1 0.10 0.5 mV Offset Voltage Stability First Month VOS/Time (Note 1) 2.0 2.0 µV/Mo Long Term (Note 2) 0.2 0.2 µV/Mo Offset Current IOS 0.1 0.6 0.2 3.2 nA Bias Current IB 13 20 18 40 nA Current Gain hFE IC = 10 nA 590 430 IC = 10 µA 500 770 250 560 IC = 10 mA 840 610 Current Gain Match ∆h FE IC = 10 µA 0.7 3.0 1.0 8.0 % 100 nA ≤ I C ≤ 10 mA 0.8 1.2 % Low Frequency Noise Voltage en p-p 0.1 Hz to 10 Hz 3 0.23 0.4 0.23 0.4 µV p-p Broadband Noise Voltage en rms 1 Hz to 10 kHz 0.60 0.60 µV rms Noise Voltage Density en fO = 10 Hz 3 7.0 9.0 7.0 9.0 nV/ √Hz fO = 100 Hz 3 6.1 7.6 6.1 7.6 nV/ √Hz fO = 1000 Hz 3 6.0 7.5 6.0 7.5 nV/ √Hz Offset Voltage Change ∆V OS/∆VCB 0 ≤ V CB ≤ 30 V 0.5 3.0 0.8 8.0 µV/V Offset Current Change ∆I OS/ ∆V CB 0 ≤ V CB ≤ 30 V 2 15 3 70 pA/V Collector-Base Leakage Current ICBO VCB = 30 V, IE = 0 4 15 50 25 200 pA Collector-Emitter Leakage Current ICES VCE = 30 V, VBE = 0 4, 5 50 200 90 400 pA Collector-Collector Leakage Current ICC VCC = 30 V 5 20 200 30 400 pA Collector Saturation VCE(SAT) IB = 0.1 mA, IC = 1 mA 0.12 0.20 0.12 0.25 V Voltage IB = 1 mA, IC = 10 mA 0.8 0.8 V Gain-Bandwidth Product fT VCE = 10 V, IC = 10 mA 450 450 MHz Output Capacitance COB VCB = 15 V, IE = 0 2.8 2.8 pF Collector-Collector Capacitance CCC VCC = 0 8.5 8.5 pF ELECTRICAL CHARACTERISTICS MAT01AH MAT01GH Parameter Symbol Conditions Min Typ Max Min Typ Min Units Offset Voltage VOS 0.06 0.15 0.14 0.70 mV Average Offset Voltage Drift TCVOS (Note 6) 0.15 0.50 0.35 1.8 µV/°C Offset Current IOS 0.9 8.0 1.5 15.0 nA Average Offset Current Drift TCIOS (Note 7) 10 90 15 150 pA/ °C Bias Current ΙΒ 28 60 36 130 nA Current Gain hFE 167 400 77 300 Collector-Base ICBO TA = 125 °C, V CB = 30 V, Leakage Current IE = 0 4 15 80 25 200 nA Collector-Emitter ICES TA = 125 °C, V CE = 30 V, Leakage Current VBE = 0 4, 6 50 300 90 400 nA Collector-Collector ICC TA = 125°C, VCC = 30 V, Leakage Current (Note 6) 30 200 50 400 nA (@ VCB = 15 V, IC = 10 A, –55 C ≤ T A ≤ +125 C, unless otherwise noted.) |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
