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MAT01N Datasheet(PDF) 3 Page - Analog Devices

Part # MAT01N
Description  Matched Monolithic Dual Transistor
PDF  8 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

MAT01N Datasheet(HTML) 3 Page - Analog Devices

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TYPICAL ELECTRICAL CHARACTERISTICS
MAT01N
Parameter
Symbol
Conditions
Typical
Units
Average Offset Voltage Drift
TCVOS
0.35
µV/°C
Average Offset Current Drift
TCIOS
15
pA/
°C
Collector-Emitter-Leakage
Current
ICES
VCE = 30 V, VBE = 0
90
pA
Collector-Base-Leakage
Current
ICBO
VCB = 30 V, IE = 0
25
pA
Gain Bandwidth Product
fT
VCE = 10 V, IC = 10 mA
450
MHz
Offset Voltage Stability
∆V
OS/T
First Month (Note 1)
2.0
µV/Mo
Long-Term (Note 2)
0.2
µV/Mo
(@ VCB = 15 V and IC = 10 A, TA = +25 C, unless otherwise noted.)
NOTES
1Exclude first hour of operation to allow for stabilization.
2Parameter describes long-term average drift after first month of operation.
3Sample tested.
4The collector-base (I
CBO) and collector-emitter (ICES) leakage currents may be
reduced by a factor of two to ten times by connecting the substrate (package) to
a potential which is lower than either collector voltage.
5I
CC and ICES are guaranteed by measurement of ICBO.
6Guaranteed by V
OS test (TCVOS
V
OS
T
for VOS
VBE) T = 298°K for TA = 25°C.
7Guaranteed by I
OS test limits over temperature.
Specifications subject to change without notice.
MAT01
–3–
REV. A
WAFER TEST LIMITS
MAT01N
Parameter
Symbol
Conditions
Limits
Units
Breakdown Voltage
BVCEO
IC = 100
µA45
V min
Offset Voltage
VOS
0.5
mV max
Offset Current
IOS
3.2
nA max
Bias Current
IB
40
nA max
Current Gain
hFE
250
min
Current Gain Match
∆h
FE
8.0
% max
Offset Voltage Change
∆V
OS/
∆V
CB
0
≤ V
CB
≤ 30 V
8.0
µV/V max
Offset Current Change
∆V
OS/
∆V
CB
0
≤ V
CB
≤ 30 V
70
pA/V max
Collector Saturation Voltage
VCE (SAT)
IB = 0.1 mA, IC = 1 mA
0.25
V max
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
(@ VCB = 15 V, IC = 10 A, TA = +25 C, unless otherwise noted.)



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