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STB120N4LF6 Datasheet(PDF) 7 Page - STMicroelectronics

Part # STB120N4LF6
Description  N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™VI DeepGATE??Power MOSFET
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB120N4LF6 Datasheet(HTML) 7 Page - STMicroelectronics

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STB120N4LF6, STD120N4LF6
Electrical characteristics
Doc ID 16919 Rev 2
7/18
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage
vs temperature
Figure 11.
Normalized on resistance vs
temperature
Figure 12.
Source-drain diode forward
characteristics
VGS
6
4
2
0
0
20
Qg(nC)
(V)
80
8
40
60
10
VDD=20V
ID=80A
12
AM08969v1
C
1000
100
0.1
10
VDS(V)
(pF)
1
Ciss
Coss
Crss
AM08970v1
VGS(th)
0.6
0.4
0.2
0
-75
TJ(°C)
(norm)
-25
0.8
75
25
125
175
1.0
1.2
ID=250µA
AM08971v1
RDS(on)
2.0
1.5
1.0
0.5
-75
TJ(°C)
(norm)
-25
75
25
125
175
0
ID=40A
VGS=10V
AM08972v1
VSD
0
20
ISD(A)
(V)
80
40
60
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ=-55°C
TJ=175°C
TJ=25°C
AM08973v1



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