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STB120N4LF6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB120N4LF6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() February 2011 Doc ID 16919 Rev 2 1/18 18 STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 m Ω, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET Features ■ Logic level drive ■ 100% avalanche tested Application ■ Switching applications – Automotive Description This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID STB120N4LF6 40 V 4.0 m Ω 80 A STD120N4LF6 40 V 4.0 m Ω 80 A DPAK 1 3 D²PAK 1 3 Table 1. Device summary Order codes Marking Packages Packaging STB120N4LF6 120N4LF6 D²PAK Tape and reel STD120N4LF6 DPAK www.st.com |
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