STH260N6F6-2 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STH260N6F6-2

Description	N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™VI DeepGATE??Power MOSFET in H²PAK-2 package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 14 page

This is information on a product in full production.

July 2012

Doc ID 018784 Rev 4

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14

STH260N6F6-2

N-channel 60 V, 1.7 m

Ω typ., 180 A STripFET™ VI DeepGATE™

Power MOSFET in H²PAK-2 package

Datasheet — production data

Features

■ Low gate charge

■ Very low on-resistance

■ High avalanche ruggedness

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram

Order code

VDSS

RDS(on) max

ID

STH260N6F6-2

60 V

< 2.4 m

Ω

180 A

H2PAK-2

1

2

3

TAB

Table 1.

Device summary

Order code

Marking

Package

Packaging

STH260N6F6-2

260N6F6

H2PAK-2

Tape and reel

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STH260N6F6-2 Datasheet(PDF) 1 Page - STMicroelectronics

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