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STB25NF06LAG Datasheet (PDF) - STMicroelectronics
STB25NF06LAG Datasheet PDF - STMicroelectronics
Part # STB25NF06LAG
Download  STB25NF06LAG Download
File Size   859.22 Kbytes
Page   15 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 60 V, 53 mΩ typ., 20 A STripFET™ II Power MOSFET in a D²PAK package

STB25NF06LAG Datasheet (PDF)

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STB25NF06LAG Datasheet PDF - STMicroelectronics

Part # STB25NF06LAG
Download  STB25NF06LAG Click to download

File Size   859.22 Kbytes
Page   15 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 60 V, 53 mΩ typ., 20 A STripFET™ II Power MOSFET in a D²PAK package

STB25NF06LAG Datasheet (HTML) - STMicroelectronics


STB25NF06LAG Product details

Features
 AEC-Q101 qualified
 Exceptional dv/dt capability
 100% avalanche tested
 Low gate charge

Applications
 Switching applications

Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
is specifically designed to minimize input
capacitance and gate charge. It is therefore ideal
as a primary switch in advanced high-efficiency
isolated DC-DC converters for Telecom and
Computer applications. It is also suitable for any
application with low gate charge drive
requirements.




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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