STB25NF06LAG datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STB25NF06LAG

Description	Automotive-grade N-channel 60 V, 53 mΩ typ., 20 A STripFET™ II Power MOSFET in a D²PAK package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 15 page

Electrical characteristics

STB25NF06LAG

4/15

DocID030043 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V,

ID = 250 µA

IDSS

Zero gate voltage drain

current

VGS = 0 V,

VDS = 60 V

µA

VGS = 0 V,

VDS = 60 V,

Tcase = 125 °C(1)

100

IGSS

Gate-body leakage

current

VDS = 0 V,

VGS = ±18 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS,

ID = 250 µA

2.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V,

ID = 10 A

mΩ

VGS = 5 V,

ID = 10 A

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V,

f = 1 MHz,

VGS = 0 V

370

Coss

Output capacitance

102

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 30 V,

ID = 20 A,

VGS = 10 V

(see Figure 14: "Test circuit

for gate charge behavior")

Qgs

Gate-source charge

Qgd

Gate-drain charge

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