STB25NF06LAG datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STB25NF06LAG

Description	Automotive-grade N-channel 60 V, 53 mΩ typ., 20 A STripFET™ II Power MOSFET in a D²PAK package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

5 / 15 page

STB25NF06LAG

Electrical characteristics

DocID030043 Rev 1

5/15

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V,

ID = 10 A,

RG = 4.7

Ω,

VGS = 10 V

(see Figure 13: "Test circuit for

resistive load switching times"

and Figure 18: "Switching time

waveform")

Rise time

td(off)

Turn-off delay time

Fall time

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD(2)

Forward on voltage

VGS = 0 V,

ISD = 20 A

1.2

trr

Reverse recovery time

ISD = 20 A,

di/dt = 100 A/µs,

VDD = 48 V

(see Figure 15: "Test circuit for

inductive load switching and

diode recovery times")

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

2.5

Notes:

(1) Pulse width limited by safe operating area .

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5 %.

STB25NF06LAG Datasheet(PDF) 5 Page - STMicroelectronics

STB25NF06LAG Datasheet(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL