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STTH200W06TV1 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STTH200W06TV1
Description  Turbo 2 ultrafast high voltage rectifier
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH200W06TV1 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH200W06TV1
2/9
Doc ID 023612 Rev 1
1
Characteristics
When the two diodes 1 and 2 are used simultaneously:
T
j(diode 1) = P (diode 1) X Rth(j-c) (per diode) + P (diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 1.0 x IF(AV) + 0.003 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
Forward rms current
Per diode
145
A
IF(peak)
Average forward current,
 = 0.2
Per diode Tc = 105 °C
200
A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
800
A
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature
150
°C
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
0.7
°C/W
Total
0.4
Rth(c)
Coupling
0.1
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-30
µA
Tj = 125 °C
-
30
300
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 100 A
1.5
V
Tj = 150 °C
-
1
1.3
Tj = 25 °C
IF = 200 A
-1.75
Tj = 150 °C
-
1.25
1.60
1.
Pulse test: tp = 5 ms,  < 2%
2.
Pulse test: tp = 380 µs,  < 2%



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