STTH200W06TV1 datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

STTH200W06TV1

Characteristics

Doc ID 023612 Rev 1

3/9

Table 5.

Dynamic characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IRM

Reverse recovery current

Tj = 125 °C

IF = 100 A, VR = 400 V

dIF/dt = -200 A/µs

-30

QRR

Reverse recovery charge

4600

Sfactor

Softness factor

0.4

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V

dIF/dt = -100 A/µs

-55

tfr

Forward recovery time

Tj = 25 °C

IF = 100 A, VFR = 2.5 V

dIF/dt = 100 A/µs

2000

VFP

Forward recovery voltage

Tj = 25 °C

-3.3

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Forward voltage drop versus

forward current (per diode)

100

120

140

160

180

100

120

140

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

PF(AV)(W)

IF(AV)(A)

IFM(A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.4

0.8

1.2

1.6

2.0

Tj=150°C

(Maximum values)

Tj=150 °C

(Typical values)

Tj=25 °C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance, junction to case,

versus pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values, per

diode)

th(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

tp(s)

RM(A)

100

150

200

250

300

350

400

450

500

IF= IF(AV)

VR= 400 V

Tj = 125°C

dIF/dt(A/µs)

STTH200W06TV1 Datasheet(PDF) 3 Page - STMicroelectronics

STTH200W06TV1 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL