STF22NM60N datasheet(4/23 Pages) STMICROELECTRONICS

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Electrical characteristics

STB/F/I/P/W22NM60N

4/23

Doc ID 15853 Rev 4

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 8 A

0.2

0.22

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

1330

4.6

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Output equivalent

capacitance

VDS = 0 to 480 V, VGS = 0

181

Gate input resistance

f=1 MHz open drain

4.7

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 16 A,

VGS = 10 V

(see Figure 18)

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